Home About Login Current Archives Announcements Editorial Board
Submit Now For Authors Call for Submissions Statistics Contact
Home > Archives > Volume 18, No 1 (2020) > Article

DOI: 10.14704/nq.2020.18.1.NQ20103

Characterization of ZnO Thin Film/p-Si Fabricated by Vacuum Evaporation Method for Solar Cell Applications

Reem Sami Ali, Khansaa Saleem Sharba, Ali Mohammed Jabbar, Sami Salman Chiad, Khalid Haneen Abass and Nadir Fadhil Habubi


Zinc oxide (ZnO)thin film (300nm) was successfully manufactured using thermal evaporation method. XRD, UV spectroscopy, AFM were used to study film characterization which was deposited on a glass substrate. Transmittance and reflection data of the film versus wavelength were investigated using UV-VIS Spectrophotometer. Over 50% transmittance values have been observed in the NIR region. Optical constants were calculated and the estimated energy gap (3.4 eV)of the prepared film. XRD results showed that films made from ZnO were crystalline with hexagonal wurtzitestructure. The measurements of (I-V) properties of the dark current and light I-V show that this variation has a high-voltage open circuit (Voc), which makes it suitable for application in highly efficient ZnO / p-Si solar cell.


ZnO Thin Film, Photovoltaic Materials, Thermal evaporation, XRD, Optical Properties

Full Text