The aim of this paper is to talk about the analysis and characterization of Charge Plasma-based Junctionless TFETs for Biosensor devices. Despite the device's obvious advantages, the steep doping profile associated with classic Tunneling Field Effect Transistor (TFET) poses significant production issues. By providing a constant doping profile across the device, junctionless TFETs (JL-TFETs) considerably reduce the problem. In this study, we looked at a variety of device variables that affect device performance, such as gate insulator dielectric constant, gate insulator thickness, silicon body thickness, doping level, and P-gate and source work function. The investigation is centred on the parameters that influence sub threshold swing (SS), on-current to off-current ratio (Ion/Ioff), and threshold voltage (VT). The effect of various parameters on on-current (Ion) has also been investigated. These have allowed us to identify how parameter adjustment can lead to peak device performance

Junctionless TFET, Sub threshold Swing, Work Function, Threshold Voltage, Non-local Bandto-Band Tunneling Model