Volume 20 No 22 (2022)
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Comparative Analysis of Tunnel FET based Biosensor for Health-IoT Applications
Raghvendra Singh, Akanksha Singh, Rajendra Kumar
Background: This study compares and explains the top Tunnel FET designs that have been suggested in the literature, specifically: Double gate Si-based TFET and InAs based TFET device for biosensors for Health-IoT Applications. Tunnel FETs have the potential to replace MOSFETs in low-power, high-performance applications. Methods: All simulations were carried out using the TCAD tool, and the simulation results show that compared to InAs-based TFET devices, traditional DGTFET devices had less current and sub-threshold slope degradation. Findings The InAs-based TFET device is a great choice for low-power, high-performance applications since it features a steep sub-threshold slope of 61 mV/dec and a nano-ampere off current at sub 1 V operation. Novelty and applications:By carefully selecting the mole fraction value for an InAs semiconductor-based TFET device, greater device performance may be achieved. The proposed Tunnel FET device has recommend ate for first-rate potential as a capable contender for replacing MOSFET in low-energy, high-performance applications such as Tunnel FET based Biosensor for Health-IoT Applications.
TFET, Leakage power, IoT, Reliability, Band to Band tunneling.
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