The paper reports a single channel conventional AlGaN/GaN HEMT device and a double channel GaN HEMT device with InGaN back barrier. A thin InGaN layer is introduced with an intention of achieving better 2DEG carrier confinement. The advantages of inserting the low band gap InGaN as back barrier is witnessed in the form of excellent DC and RF performance of the proposed device in comparison to the conventional AlGaN/GaN HEMT device. Both the single channel and double channel GaN HEMT devices were designed and simulated using SILVACO TCAD tool. Various device parameters were reported for comparison. The proposed double channel GaN HEMT device reported high drain current of 500mA/mm and transconductance value of 430mS/mm at Vds=2V. Better RF characteristics were exhibited by the proposed device as it offers a cut-off frequency of 25GHz and maximum frequency of 90GHz. A minimum noise figure of 0.54dB and intrinsic delay of 5.30ps for the device is reported. The transconductance plot offers a flatter peak hence concluding that the device offers higher linearity than its counterpart. The excellent performance of the proposed double channel HEMT device in terms of DC and RF performance makes it a suitable candidate for RF applications.

InGaN; AlGaN/GaN; HEMT; 2DEG carrier confinement; W-shaped asymmetric quantum well; Linearity.