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Volume 20 No 10 (2022)
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FTIR analysis of SiO2 nanofilm deposited by anodic oxidation method
Assim. A. Issa , Khalid .Q. Kheder
Abstract
In the present work SiO2 nano film is formed by the electrochemical method using three electrodes.
Chemical analyses and stress measurement at the interface for the samples by FTIR technique revealed
that there is a small amount of impurities in them. A comparison is made between the results obtained
by anodic oxidation method in this study and the published results by other growth methods. It is found
that the stress produced in the anodic oxidation is much less than that in the other techniques
Keywords
FTIR,Nano film ,SiO2 film , Si-SiO2structures
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