In this research, as the thin films were formed by an AACVD process, copper doped nickel oxide was used to prepare the Cu doped Ni thin films by ratio doping (Cu/Ni = 0, 7.5, 10 and 12.8 at w.t %). Thin films of Cu doped NiO were heated at a crystallization temperature of 400 °C for 2 hours. The thin films obtained by the AACVD method have a film thickness of the order (45-62 nm). Promising solar cells that could be created by NiO film as the absorber using Cu doping. The NiO:Cu film has promising optical characteristics; about (3.5-2.8 eV) energy gap band and a high absorption coefficient, which means that the most suitable absorber can be commercially developed using the NiO:Cu film. Furthermore, there are no rare metals in the NiO: Cu film The best conversion efficiency with the heterojunction of NiO: Cu/Si and NiO:Cu was 2.8571429% which showed the possibility of a very low cost solar cell

Thin Film, Aerosol-Assisted Chemical Vapor Deposition, Hall Effect, I-V Characteristics, Hetrojunction