Thin films of composite Zinc Indium Oxide (ZIO) are grown on glass substrates by thermal vapour evaporation technique. Thin films with different ratios of ZnO:In2O3= (90:10, 80:20,70:30,60:40 and 50:50) wt% were prepared and annealed at 500 0 C for 2 hours.The X-ray diffraction(XRD) patterns reveal that the ZIO films arecrystalline initially but as we increase the percentage of Indium Oxide, the Crystanllity of films decreases Significantly. X-ray photoelectron spectroscopy (XPS)provides information about the binding energies of deposited materials and the atomic percentage of elements of composite thin films.The SEM results indicate that the Doping of Indium Oxide changes the film’smorphology.UV visible spectroscopy of the films indicates that band gap is reduced with increased concentration of In in the mixture and transmittance is also decreasedat higher indium concentration.

Composite ZIO thin films, XRD, SEM,XPS,Optical band gap