Journal Cover
Volume 19 No 2 (2021)
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Low-Temperature Method for Manufacturing Metal Oxide Thin-Film Transistors
Aditya Verma, Navneet Rawat
Abstract
This research presents a novel method for manufacturing metal oxide thin-film transistors (TFTs) at low temperatures. The method involves coupling a metal-oxide film semiconductor to a thin film grid dielectric layer. By carefully controlling the combustion of a fuel-oxidant mixture, the desired metal-oxide film semiconductor is formed at temperatures below 350°C. This approach offers a cost-effective and scalable solution for producing high-performance TFTs on flexible plastic substrates.
Keywords
metal oxide, thin-film transistors, low temperature, semiconductor, combustion
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