In this paper we have reported dynamics of computer memory element memristor due to spin polarization of current propelling the domain wall growth within the conductor-magnetic-conductor layer with current perpendicular to the plane. A memristor is the fourth basic circuit element after the resistor, capacitor and inductor that relates charge with magnetic flux. Direct current and alternating current characteristics of the memristor sample has been analyzed as the dynamic behavior, most sought after in electronic circuits. Memristance behavior has been realized for ac input voltage of 500 mV and 1V at frequencies 1 Hz and 10 Hz. The sample shows the pinched hysteresis loop at the said frequencies which is the characteristic feature of the memristor. Impact of window functions over the dynamics of state variable at the boundary of the sample is also studied. Window function is the additional term in the state equation of memristor which models the nonlinear behavior at the device boundary. This shows a remarkable similarity in the dynamics of state variable except in the Biolek window

Computer memory, Memristor; Pinched hysteresis loop; Window function; State variable; DC dynamics; AC dynamics.