Silicon Carbide (SiC) thin film nanostructures were prepared by using the pulse laser deposition technique at room temperature with varying lasing energies to optimize the quality of the films. Structural properties of the prepared films were identified by X-Ray diffraction patterns, atomic force microscopy, UV-visible spectroscopy, and the current-voltage characteristic curve. The results showed that good quality silicon carbide films can be prepared by pulse laser deposition technique on silicon p-Si (111). The X-Ray diffraction of the prepared films showed an amorphous structure that turned into polycrystalline when annealed to 400oC. It can be seen from I-V characteristics of SiC/Si solar cell that the photocurrent density increased with increasing bias voltage. Moreover, the study showed that the higher falling factor was (0.46) and efficiency was (3.46).

Silicon Carbide, Pulse Laser Deposition, Solar Cell, Nanostructures, Heterojunction Solar Cell.