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Volume 19 No 1 (2021)
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SCR and MOSFET performance analysis and Comparison
Prof. Sase Vishnu Prakashrao, Prof. Bhosale Shivaji Subhash, Prof. Mahadik Snehal Shrikant, Prof. Zol Ramdas Madhukar
Abstract
A BJT is also a semiconductor device with PN junctions that can amplify the signals. It is also a three-terminal device emitter, collector, and base. BJTs are mainly used in switching and amplifier circuits that increase the strength of a weak signal, whereas SCRs are used in rectifier and power control applications.
Bipolar Junction Transistor (BJT) :
A BJT is also a semiconductor device with PN junctions that can amplify the signals. It is also a three-terminal device emitter, collector, and base. BJTs are mainly used in switching and amplifier circuits that increase the strength of a weak signal, whereas SCRs are used in rectifier and power control applications.
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) :
MOSFETs are similar to BJTs used in switching and amplifier circuits. It is a three-layer, three/four-terminal (drain, source, and gate) unipolar device. The main difference between BJT and MOSFET is that BJT is a current-controlled device whereas the flow of current in MOSFET is controlled by voltage i.e., it is a voltage-controlled device.
Keywords
A BJT is also a semiconductor device with PN junctions that can amplify the signals.
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