Due to its unique physical characteristics like high intrinsic carrier mobility, small band gap, and possible monolithic integration with silicon (Si) based devices, germanium (Ge) has recently emerged as a promising candidate in order to enhance the supplementary metal oxide semiconductors (CMOS) devices. Obtaining effective electronic devices based on germanium requires knowledge of the diffusion characteristics of the dopants in this semiconductor. At most, a diffusion coefficient proportional to the square of the free electron concentration (n) has been used thus far to describe the diffusion of arsenic (As) and antimony(Sb) in germanium. By simulating experimental As and Sb diffusion profiles in Ge, this paper establishes the temperature dependence of the quadratic proportionality factors of the diffusion coefficients of arsenic and antimony in germanium with free electron concentration. By accounting for the quadratic proportionality between the diffusion coefficient and the free electron concentration, an accurate simulation is achieved.

arsenic, antimony, proportionality factor, germanium.